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Broadband photodetectors (PDs) have great applications in both industrial and scientific sectors. In this study, solution-processed broadband PDs with an “inverted” vertical photodiode device structure without incorporating transparent conductive oxides electrodes, fabricated by bulk heterojunction (BHJ) composites composed of a low optical gap conjugated polymer blended with highly electrically conductive PbS quantum dots (QDs), operated at room temperature, are reported. The low optical gap conjugated polymer incorporated with PbS QDs contributes to the spectral response from the ultraviolet (UV)-visible to the infrared (IR) range. To realize the IR spectral response and to circumvent the weak IR transparency of the transparent oxide electrodes, the implementation of a photodiode with an “inverted” vertical device structure with the Au anode and the Ba/Al bilayer semitransparent cathode passivated with the MgF 2 layer is demonstrated. Photoinduced charge carrier transfer occurring within the BHJ composite gave rise to decent photocurrent, resulting in detectivities greater than 10 12 Jones (cm Hz 1/2 /W) over the wavelength from the UV-visible to the IR range under low applied bias. Thus, our findings of the utilization of the BHJ composites and an “inverted” vertical photodiode without the incorporation of the transparent conductive oxide electrodes provide a facile way to realize broadband PDs.